A high-power 975 nm tilted cavity laser with a 0.13 nm K-1 thermal shift of the lasing wavelength

Semiconductor Science and Technology

Volumn 22, Issue 9, 2007, Pages 1061-1065

  Shchukin, V A ^a,b   Ledentsov, N N ^a,b   Karachinsky, L Ya ^a,b   Novikov, I I ^b   Shernyakov, Yu M ^b   Gordeev, N Yu ^b   Maximov, M V ^b   Lifshits, M B ^a,b   Savelyev, A V ^a,b   Kovsh, A R ^c   Krestnikov, I L ^c   Mikhrin, S S ^c   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c INNOLUME GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; REFLECTION; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES; WAVEGUIDES;

MULTILAYER INTERFERENCE REFLECTOR (MIR); TEMPERATURE COEFFICIENT; THERMAL SHIFT; TILTED CAVITY LASER;

SEMICONDUCTOR LASERS;

EID: 34548244435     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/9/014     Document Type: Article

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