Heat capacity and Grüneisen parameter for GaN with zinc-blende structure

Chinese Journal of Chemical Physics

Volumn 20, Issue 3, 2007, Pages

  Sun, Xiao Wei ^a   Liu, Zi Jiang ^b,c   Song, Ting ^d   Liu, Xiao Bin ^e   Wang, Cheng Wei ^b   Chen, Qi Feng ^c  

^a LANZHOU JIAOTONG UNIVERSITY   (China)

^b LANZHOU CITY UNIVERSITY   (China)

^c RESEARCH CENTER OF LASER FUSION   (China)

^d NORTHWEST NORMAL UNIVERSITY   (China)

^e TIANSHUI NORMAL UNIVERSITY   (China)

Author keywords

GaN; Gr neisen parameter; Heat capacity; Molecular dynamics simulation

Indexed keywords

CALCULATIONS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; MOLECULAR DYNAMICS; TEMPERATURE; ZINC; ZINC SULFIDE;

AMBIENT CONDITIONS; CONSTANT-VOLUME HEAT CAPACITY; FIRST-PRINCIPLES CALCULATION; MOLECULAR DYNAMICS METHODS; MOLECULAR DYNAMICS SIMULATIONS; POLARIZABLE POTENTIAL; THERMODYNAMIC PARAMETER; ZINC-BLENDE STRUCTURES;

SPECIFIC HEAT;

EID: 34548184357     PISSN: 16740068     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-0068/20/03/233-236     Document Type: Article

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