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Volumn 139, Issue 1-2 SPEC. ISS., 2007, Pages 42-46

A GaAs acoustic sensor with frequency output based on resonant tunneling diodes

Author keywords

Acoustic sensor; Etch stop technology; GaAs; RTD

Indexed keywords

ACOUSTIC DEVICES; CURRENT VOLTAGE CHARACTERISTICS; NATURAL FREQUENCIES; NEGATIVE RESISTANCE; RESONANT TUNNELING; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 34548172537     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2006.11.011     Document Type: Article
Times cited : (13)

References (13)
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    • High pressure studies of resonant tunnelling in a graded parameter superlattice and in double barrier shuctures of GaAs/AlAs
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  • 6
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    • Fabrication of silicon condenser microphone using single wafer technology
    • Scheeper P.R., Van der Donk A.G.H., Olthuis W., et al. Fabrication of silicon condenser microphone using single wafer technology. J. Microelectromech. Syst. 3 (1992) 147-153
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  • 7
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    • A GaAs pressure sensor with frequency output based on resonant tunneling diodes
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.