-
1
-
-
34848900870
-
Oscillations up to 712 GHz in InAs/AlSb resonant tunneling diodes at room temperature
-
Brown E.R., Söderström J.R., Parker C.D., et al. Oscillations up to 712 GHz in InAs/AlSb resonant tunneling diodes at room temperature. Appl. Phys. Lett. 58 (1991) 2291
-
(1991)
Appl. Phys. Lett.
, vol.58
, pp. 2291
-
-
Brown, E.R.1
Söderström, J.R.2
Parker, C.D.3
-
2
-
-
34548169497
-
A multiplestate memory cell based on resonant tunneling structures for signal processing in three-state logic
-
Söderström J., and Anderson T.G. A multiplestate memory cell based on resonant tunneling structures for signal processing in three-state logic. IEEE Electr. Device Lett. 9 (1988) 2163-2164
-
(1988)
IEEE Electr. Device Lett.
, vol.9
, pp. 2163-2164
-
-
Söderström, J.1
Anderson, T.G.2
-
3
-
-
0026903981
-
A new resonant tunnel diode-based multivalued memory circuit using a MESFET depletion load
-
Yan Z.X., and Deen M.J. A new resonant tunnel diode-based multivalued memory circuit using a MESFET depletion load. IEEE J. Solid-State Circuits 27 (1992) 1198-1202
-
(1992)
IEEE J. Solid-State Circuits
, vol.27
, pp. 1198-1202
-
-
Yan, Z.X.1
Deen, M.J.2
-
4
-
-
34548190936
-
High pressure studies of resonant tunnelling in a graded parameter superlattice and in double barrier shuctures of GaAs/AlAs
-
Pitchard R., Upstein P.C., Kerr T.M., et al. High pressure studies of resonant tunnelling in a graded parameter superlattice and in double barrier shuctures of GaAs/AlAs. Semicond. Sci. Technol. (1989) 4754
-
(1989)
Semicond. Sci. Technol.
, pp. 4754
-
-
Pitchard, R.1
Upstein, P.C.2
Kerr, T.M.3
-
5
-
-
0003236005
-
The I-V characteristics of double barrier resonant tunneling diodes: observation and calculation on their temperature dependence and symmetry
-
Chen J., Chen J.G., and Yang C.H. The I-V characteristics of double barrier resonant tunneling diodes: observation and calculation on their temperature dependence and symmetry. J. Appl. Phys. 70 (1991) 3131
-
(1991)
J. Appl. Phys.
, vol.70
, pp. 3131
-
-
Chen, J.1
Chen, J.G.2
Yang, C.H.3
-
7
-
-
0033307001
-
A GaAs pressure sensor with frequency output based on resonant tunneling diodes
-
Mutamba K., Flath M., and Sigurdard́ottir A. A GaAs pressure sensor with frequency output based on resonant tunneling diodes. IEEE Trans. Instrum. Meas. 48 (1999) 6-7
-
(1999)
IEEE Trans. Instrum. Meas.
, vol.48
, pp. 6-7
-
-
Mutamba, K.1
Flath, M.2
Sigurdard́ottir, A.3
-
12
-
-
0142004209
-
Micro-Raman measurements of bending stresses in micromachined silicon flexures
-
Srikar V.T., Anna K., Swan M., Selin Unlu, et al. Micro-Raman measurements of bending stresses in micromachined silicon flexures. J. Microelectromech. Syst. 12 (2003) 779-787
-
(2003)
J. Microelectromech. Syst.
, vol.12
, pp. 779-787
-
-
Srikar, V.T.1
Anna, K.2
Swan, M.3
Selin Unlu4
-
13
-
-
0348239692
-
Piezoelectric effect in (0 0 1)- and (1 1 1)-oriented double-barrier resonant tunneling devices
-
Cong L., Albrecht J.D., Nathan M.I., et al. Piezoelectric effect in (0 0 1)- and (1 1 1)-oriented double-barrier resonant tunneling devices. J. Appl. Phys. 79 (1996) 1358-1360
-
(1996)
J. Appl. Phys.
, vol.79
, pp. 1358-1360
-
-
Cong, L.1
Albrecht, J.D.2
Nathan, M.I.3
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