High performance piezoresistive micro strain sensors

Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007

Volumn , Issue , 2007, Pages 1052-1055

  Kuo, Hung I ^a,b   Guo, Jun ^b   Ko, Wen H ^a,b  

^a IEEE

^b Case Western Reserve University   (United States)

Author keywords

Microelectromechanical devices; Piezoelectric devices; Strain measurement; Temperature

Indexed keywords

MEMS; PIEZOELECTRIC DEVICES; SILICON; STRAIN MEASUREMENT; THERMODYNAMIC STABILITY;

GAUGE FACTORS; PIEZORESISTIVE MICRO STRAIN SENSORS; TIME DRIFT PROBLEMS;

MICROSENSORS;

EID: 34548126841     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NEMS.2007.352199     Document Type: Conference Paper

References (4)

1. H. Kuo, J. Guo, D. Young, and W. Ko, "Packaging of micro strain sensors" Proc. of IEEE Sensor Conf. M4P-P.14, pp. 546-549, 2004
2. Y. Kanda, "A graphical representation of the piezoresistance coefficients in silicon ", IEEE Trans on Electron Devices, ED-29, vol.1, January, pp. 64-70, 1982
3. K. Matsuda, "Phonon scattering effects on temperature dependence of conductivity in strained silicon", J. of Comp. Elec. v1. pp. 425-429, 2002
4. K. Yamada, M. Nishihara, S. Shimada, M. Tanabe, M. Shimazoe, and Y. Matsuoka, "Nonlinearity of the piezoresistance effect of p-type silicon diffused layers", IEEE Trans. On Electron Devices. ED-29, vol.1, pp.71-77, January, 1982