Phonon Scattering Effects on Temperature Dependence of Conductivity in Strained Silicon

Journal of Computational Electronics

Volumn 1, Issue 3, 2002, Pages 425-429

  Matsuda, Kazunori ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

device simulation; mobility; piezoresistance; stress; temperature dependence

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ITERATIVE METHODS; PHONON SCATTERING; PHONONS; POISSON EQUATION; STATISTICAL MECHANICS; STRESSES; TEMPERATURE DISTRIBUTION;

BOLTZMAN TRANSPORT THEORY; DEVICE SIMULATIONS; IMPURITY CONCENTRATION; NEUTRAL IMPURITY SCATTERING; PIEZORESISTANCE; PIEZORESISTANCE EFFECTS; RELAXATION TIME APPROXIMATION; TEMPERATURE DEPENDENCE;

STRAINED SILICON;

EID: 21844471211     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/A:1020780431321     Document Type: Article

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