Effect of donor doping on the magnetic properties of Co-doped ZnO films

Journal of Crystal Growth

Volumn 307, Issue 1, 2007, Pages 14-18

  Liu, Xue Chao ^a,b   Shi, Er Wei ^a   Chen, Zhi Zhan ^a   Zhang, Hua Wei ^a,b   Chen, Bo Yuan ^a,b   Song, Li Xin ^a   Wei, Shi Qiang ^c   He, Bo ^c   Xie, Zhi ^c  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

A1. X ray absorption spectroscopy; A3. Physical vapor deposition; B1. Co doped ZnO; B2. Diluted magnetic semiconductors

Indexed keywords

DOPING (ADDITIVES); INDUCTIVELY COUPLED PLASMA; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; PHYSICAL VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

CO-DOPED ZNO; DILUTED MAGNETIC SEMICONDUCTORS; FERROMAGNETIC ORDERING; X-RAY ABSORPTION SPECTROSCOPY;

THIN FILMS;

EID: 34548120685     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.05.050     Document Type: Article

References (21)

1. Liu C., Yun F., and Morkoc H. J. Mater. Sci. 16 (2005) 555
2. Dietl T., Ohno H., Matsukura F., Cibert J., and Ferrand D. Science 287 (2000) 1019
3. Sato K., and Yoshida H.K. Jpn. J. Appl. Phys. 39 (2000) L555
4. Rode K., Anane A., Mattana R., and Contour J.P. J. Appl. Phys. 93 (2003) 7676
5. Kim J.H., Kim H., Kim D., Ihm Y.E., and Choo W.K. J. Appl. Phys. 92 (2001) 6066
6. Bouloudenine M., Viart N., Colis S., Kortus J., and Dinia A. Appl. Phys. Lett. 87 (2005) 52501
7. Martinez B., Sandiumenge F., Balcells L., and Fontcuberta J. J. Appl. Phys. 97 (2005) 10D311
8. Tay M., Wu Y.H., Han G.C., Chong T.C., Zheng Y.K., Wang S.J., Chen Y.B., and Pan X.Q. J. Appl. Phys. 100 (2006) 063910
9. Coey J.M.D., Venkatesan M., and Fitzgerald C.B. Nat. Mater. 4 (2005) 173
10. Venkatesan M., Fitzgerald C.B., Lunney J.G., and Coey J.M.D. Phys. Rev. Lett. 93 (2004) 177206
11. Zhao H.Y., Fan Q.L., Song L.X., Zhang T., Shi E.W., and Hu X.F. Appl. Surf. Sci. 252 (2006) 3065
12. Pearton S.J., Norton D.P., Ip K., Heo Y.W., and Steiner T. Prog. Mater. Sci. 50 (2005) 293
13. Lee H.J., Jeong S.Y., Cho C.H., and Park C.H. Appl. Phys. Lett. 81 (2002) 4020
14. Murakami M., Matsumoto Y., and Hasegawa T. J. Appl. Phys. 95 (2004) 5330
15. Liu X.C., Shi E.W., Chen Z.Z., Zhang H.W., Song L.X., Shu D.Y., and Wang H. J. Crystal Growth 296 (2006) 135
16. Ramachandran S., Naryan J., and Prater J.T. Appl. Phys. Lett. 88 (2006) 242503
17. Hsu H.S., Huang J.C.A., Huang Y.H., Liao Y.F., Lin M.Z., Lee C.H., Lee J.F., Chen S.F., Lai L.Y., and Liu C.P. Appl. Phys. Lett. 88 (2006) 242507
18. Hong N.H., Sakai J., Huong N.T., Poirot N., and Ruyter A. Phys. Rev. B 72 (2005) 045336
19. Philip J., Punnoose A., Kim B.I., Reddy K.M., Layne S., Holmes J.O., Satpati B., Leclair P.R., Santos T.S., and Moodera J.S. Nat. Mater. 5 (2006) 298
20. Jaffe J.E., Droubay T.C., and A Chambers S. J. Appl. Phys. 97 (2005) 073908
21. Weng H.M., Yang X.P., Dong J.M., Mizuseki H., Kawasaki M., and Kawazoe Y. Phys. Rev. B 69 (2004) 125219