Picosecond kinetics of photoexcited carriers in gallium arsenide containing aluminum nanoclusters

Semiconductors

Volumn 41, Issue 8, 2007, Pages 909-913

  Aleshkin, V Ya ^a   Vostokov, N V ^a   Gaponova, D M ^a   Danil'Tsev, V M ^a   Dubinov, A A ^a   Krasil'Nik, Z F ^a   Korytin, A I ^b   Kuritsyn, D I ^a   Pryakhin, D A ^a   Shashkin, V I ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b INSTITUTE OF APPLIED PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34548099399     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782607080088     Document Type: Article

References (5)

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3. N. V. Vostokov, V. M. Danil'tsev, M. N. Drozdov, et al., Izv. Ross. Akad. Nauk, Ser. Fiz. 68, 55 (2004).
4. N. V. Vostokov, S. A. Gusev, V. M. Danil'tsev, et al., Fiz. Tekh. Poluprovodn. St. (Petersburg) 39, 92 (2005) [Semiconductors 39, 82 (2005)].
5. R. T. Tung, Mater. Sci. Eng. R 35, 1 (2001).