High temperature properties of CdTe crystals, doped by Sb

IEEE Transactions on Nuclear Science

Volumn 54, Issue 4, 2007, Pages 763-768

  Fochuk, P ^a   Grill, R ^b   Nykonyuk, Y ^c   Krustok, J ^d   Armani, N ^e   Zakharuk, Z ^a   Grossberg, M ^d   Panchuk, O ^a  

^a CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

^b CHARLES UNIVERSITY   (Czech Republic)

^c NATIONAL UNIVERSITY OF WATER AND ENVIRONMENTAL ENGINEERING   (Ukraine)

^d TALLINN UNIVERSITY OF TECHNOLOGY   (Estonia)

^e IMEM CNR   (Italy)

Author keywords

CdTe; Hall effect; High temperature; Modeling; Photoluminescence; Point defects; Sb

Indexed keywords

ANTIMONY; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; HALL EFFECT; HIGH TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; POINT DEFECTS; VAPOR PRESSURE;

POINT DEFECT EQUILIBRIUM;

CADMIUM ALLOYS;

EID: 34548082739     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.902368     Document Type: Conference Paper

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