Nanodiamond lateral VFEM technology for harsh environments

IEEE Transactions on Nuclear Science

Volumn 54, Issue 4, 2007, Pages 1061-1065

  Kang, W P ^b   Davidson, J L ^a,b   Subramanian, K ^a,b   Choi, B K ^a,b   Galloway, K F ^a,b  

^a IEEE

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

High temperature; Lateral device; Nanodiamond; Total dose; Vacuum field emission microelectronics (VFEM)

Indexed keywords

DIAMONDS; FIELD EMISSION; HIGH TEMPERATURE APPLICATIONS; NANOCRYSTALLINE MATERIALS; SILICA;

HARSH ENVIRONMENTS; LATERAL DEVICE; TOTAL DOSE; VACUUM FIELD EMISSION MICROELECTRONICS (VFEM);

MICROELECTRONICS;

EID: 34548068509     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.892117     Document Type: Conference Paper

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