Fabrication of p- And n-type field-effect transistors using poly(p-phenylenevinylene) via water-soluble precursor under high-gravity condition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 8-11, 2007, Pages

  Kayashima, Hiroshi ^a   Yasuda, Takeshi ^a   Fujita, Katsuhiko ^a   Tsutsui, Tetsuo ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Field effect transistor; High gravity condition; n type; p type; poly(p phenylenevinylene); V2O5 buffer layer

Indexed keywords

AROMATIC POLYMERS; ELECTRON MOBILITY; THIN FILMS;

DROP CASTING; HIGH-GRAVITY CONDITION; POLY(P-PHENYLENEVINYLENE);

FIELD EFFECT TRANSISTORS;

EID: 34547909614     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L177     Document Type: Article

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