Optical second-harmonic generation measurements of hole carrier injection and trapping in pentacene field-effect transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2722-2726

  Lim, Eunju ^a   Manaka, Takaaki ^a   Tamura, Ryosuke ^a   Iwamoto, Mitsumasa ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Injection carrier; Maxwell Wagner effect element; Pentacene FET; Second harmonic generation; Trapped carrier

Indexed keywords

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON INJECTION; HARMONIC GENERATION; HOLE TRAPS; HYSTERESIS;

HOLE CARRIER INJECTION; MAXWELL-WAGNER EFFECT ELEMENT; PENTACENE; TRAPPED CARRIER;

FIELD EFFECT TRANSISTORS;

EID: 34547900739     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2722     Document Type: Article

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