Study of self-heating in Si nano structure for floating body-surround gate transistor with high-k dielectric films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 5 B, 2007, Pages 3189-3192

  Endoh, Tetsuo ^a   Tanaka, Kousuke ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Nano scale Si MOS devices; Seebeck effect; Self heating effect; Si nanowire; Temperature distribution

Indexed keywords

DIELECTRIC FILMS; GATE DIELECTRICS; MOS DEVICES; SEEBECK EFFECT; TEMPERATURE DISTRIBUTION; TRANSISTORS;

NANO-SCALE SI-MOS DEVICES; SELF-HEATING EFFECTS; SI NANOWIRES;

NANOCRYSTALLINE SILICON;

EID: 34547871360     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.3189     Document Type: Article

References (2)

1. T. Endoh, T. Nakamura, and F. Masuoka: IEICE Trans. Electron. E80-C (1997) 911.
2. F. J. De La Hidalga, M. J. Deen, and E. A. Gutiérrez: IEEE Trans. Electron Devices 47 (2000) 1098.