Boron clusters in high-dose implanted silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 1, 2007, Pages 14-20

  Ohmori, Kengo ^a   Esashi, Noboru ^a   Atoro, Eisaku ^a   Sato, Daisuke ^a   Kawanishi, Hiroyuki ^a   Higashiguchi, Yoshitsune ^a   Hayafuji, Yoshinori ^a  

^a KWANSEI GAKUIN UNIVERSITY   (Japan)

Author keywords

Boron; Calculation; Cluster; Double acceptor; High dose implantation; Silicon; Structural transition; XPS

Indexed keywords

BORON COMPOUNDS; CHEMICAL SHIFT; ELECTRONIC STRUCTURE; MATHEMATICAL MODELS; X RAY PHOTOELECTRON SPECTROSCOPY;

DOUBLE ACCEPTORS; HIGH DOSE IMPLANTATION; HOLE GENERATION; STRUCTURAL TRANSITION;

SILICON COMPOUNDS;

EID: 34547871339     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.14     Document Type: Article

References (29)

1. H. Ryssel, K. Muller, K. Habergr, R. Henkelmann, and F. Jahnel:: J. Appl. Phys. 22 (1980) 35.
2. N. Saitoh, T. Akamine, K. Aoki, and Y. Kojima: Jpn. J. Appl. Phys. 32 (1993) 4404.
3. W. Luo and P. Clancy: J. Appl. Phys. 89 (2001) 1596.
4. J. Zhu, T. D. dela Rubia, L. H. Yang, C. Mailhiot, and G. H. Gilmer: Phys. Rev. B 54 (1996) 4741.
5. R. M. Adams: Boron, Mettalo-Boron Compounds and Boranes (Interscience Publishers, New York, 1964).
6. N. N. Greenwood: Comp. Inorg. Chem. 1 (1973) 665.
7. I. Higashi: AIP Conf. Proc. 140 (1986) 1.
8. B. Morosin, A. W. Mullendore, D. Emin, and G. A. Slack: AIP Conf. Proc. 140 (1986) 70.
9. I. Mizushima, M. Watanabe, A. Murakoshi, M. Hotta, M. Kashiwagi, and M. Yoshiki: Appl. Phys. Lett. 63 (1993) 373.
10. I. Mizushima, A. Murakoshi, M. Watanabe, M. Yoshiki, M. Hotta, and M. Kashiwagi: Jpn. J. Appl. Phys. 33 (1994) 404.
11. J. Yamauchi, N. Aoki, and I. Mizushima: Phys. Rev. B 55 (1997) 10245.
12. M. Okamoto, K. Hashimoto, and K. Takayanagi: Appl. Phys. Lett. 70 (1997) 978.
13. K. Ohmori, N. Esashi, M. Takao, D. Sato, and Y. Hayafuji: Appl. Phys. Lett. 87 (2005) 112101.
14. C. Satoko, M. Tsukada, and H. Adachi: J. Phys. Soc. Jpn. 45 (1978) 1333.
15. J. C. Slater: Phys. Rev. 81 (1951) 385.
16. J. C. Slater: Quantum Theory of Molecules and Solids (McGraw-Hill, New York, 1974).
17. G. Kresse and J. Hafner: Phys. Rev. B 47 (1993) 558.
18. W. H. Press, B. P. Flannery, S. A. Teukolsky, and W. T. Vetterling: em Numerical Recipes (Cambridge University Press, New York, 1986).
19. J. P. Perdew and Y. Wang: Phys. Rev. B 45 (1992) 13244.
20. H. Kimura, S. Imanaga, Y. Hayafuji, and H. Adachi: J. Phys. Soc. Jpn. 62 (1993) 2663.
21. H. Kimura, S. Imanaga, Y. Hayafuji, and H. Adachi: Bull. Soc. DV-Xα 3 (1990) 7.
22. S. M. Sze: Physics of Semiconductors Devices (Wiley, New York, 1981) 2nd ed.
23. G. L. Pearson and J. Bardeen: Phys. Rev. 75 (1949) 865.
24. D. Emin: Phys. Today (1987) No. 1, 55.
25. D. W. Bullett: AIP Conf. Proc. 140 (1986) 249.
26. H. C. Longuet-Higgens and M. de V. Roberts: Proc. R. Soc. London, Ser. A 230 (1955) 110.
27. T. Kazahaya and M. Hirose: Jpn. J. Appl. Phys. 25 (1986) L75.
28. F. F. Morehead, Jr. and B. L. Crowder: in Ion Implantation, ed. F. H. Eisen et al. (Gordon and Breach. Science, London, 1971) p. 25.
29. R. Kelly and H. M. Naguib: Proc. Int. Conf. Atomic Phenomena in Solids (North-Holland, Amsterdam, 1970).