A mechanism for hole generation by octahedral B 6 clusters in silicon

Applied Physics Letters

Volumn 87, Issue 11, 2005, Pages

  Ohmori, Kengo ^a   Esashi, Noboru ^a   Takao, Masakazu ^a   Sato, Daisuke ^a   Hayafuji, Yoshinori ^a  

^a KWANSEI GAKUIN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIVACANCY SITES; FIRST-PRINCIPLE CALCULATIONS; HOLE CARRIERS; HOLE GENERATION;

BORON COMPOUNDS; COMPUTER SIMULATION; ELECTRONIC STRUCTURE; ION IMPLANTATION; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

HOLE MOBILITY;

EID: 24944562810     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2035880     Document Type: Article

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