Reduction of process-induced damage and improvement of imprint characteristics in SrBi2Ta2O9 capacitors by postmetallization annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 2, 2007, Pages 695-697

  Ashikaga, Kinya ^a   Takaya, Koji ^a   Kanehara, Takao ^a   Yoshimaru, Masaki ^a   Koiwa, Ichiro ^b  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

^b KANTO GAKUIN UNIVERSITY   (Japan)

Author keywords

Ferroelectric random access memory; Imprint degradation; Postmetallization annealing; Process induced damage; SrBi2Ta2O 9

Indexed keywords

ANNEALING; HYDROGEN; RANDOM ACCESS STORAGE; STRONTIUM COMPOUNDS;

FERROELECTRIC RANDOM ACCESS MEMORY; IMPRINT DEGRADATION; POSTMETALLIZATION ANNEALING; PROCESS-INDUCED DAMAGE;

CAPACITORS;

EID: 34547864288     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.695     Document Type: Article

References (6)

1. S. Zafar, V. Kaushik, P. Laberge, P. Chu, R. E. Jones, R. L. Hance, P. Zurcher, B. E. White, D. Taylor, B. Melnik, and S. Gillespie: J. Appl. Phys. 82 (1997) 4469.
2. J. Im, O. Auciello, A. R. Kraus, D. M. Gruen, R. P. H. Chang, S. H. Kim, and A. I. Kingon: Appl. Phys. Lett. 74 (1999) 1162.
3. W. P. Chen, H. L. W. Chan, F. C. Yiu, K. M. Ng, and P. C. K. Liu: Appl. Phys. Lett. 80 (2002) 3587.
4. J. D. Banieki, J. S. Cross, M. Tsukada, and J. Watanabe: Appl. Phys. Lett. 81 (2002) 3837.
5. I. Koiwa, K. Tani, J. Mita, and T. Iwabuchi: Jpn. J. Appl. Phys. 37 (1998) 192.
6. K. Ashikaga, K. Takaya, T. Kanehara, and I. Koiwa: Appl. Phys. Lett. 86 (2005) 162901.