Photoluminescence spectra and lifetimes of 4I 13/2 → 4I 15/2 and 4I 11/2 → 4I 15/2 transitions in erbium doped GeGase and GeGas glasses

Journal of Materials Science: Materials in Electronics

Volumn 18, Issue SUPPL. 1, 2007, Pages 153-157

  Koughia, K ^a   Munzar, M ^a   Aoki, T ^b   Kasap, S O ^a  

^a UNIVERSITY OF SASKATCHEWAN   (Canada)

^b TOKYO POLYTECHNIC UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY TRANSFER MODEL; TRANSIENT PHOTOLUMINESCENCE;

ERBIUM; OPTICAL TRANSITIONS; PHOTOLUMINESCENCE SPECTROSCOPY; QUENCHING; SEMICONDUCTING GLASS; SEMICONDUCTOR DEVICE MODELS; STOICHIOMETRY;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 34547602381     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9189-5     Document Type: Conference Paper

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