Growth of TGS crystals using uniaxially solution-crystallization method of Sankaranarayanan-Ramasamy

Crystal Research and Technology

Volumn 42, Issue 2, 2007, Pages 151-156

  Balamurugan, N ^a   Lenin, M ^a   Bhagavannarayana, G ^b   Ramasamy, P ^a,c  

^a ANNA UNIVERSITY   (India)

^b NATIONAL PHYSICAL LABORATORY   (India)

^c SSN COLLEGE OF ENGINEERING   (India)

Author keywords

Dielectric properties; Growth from solution; High resolution x ray diffraction; TGS crystal; UV Vis studies

Indexed keywords

CRYSTALLIZATION; DIELECTRIC PROPERTIES; ULTRAVIOLET RADIATION; X RAY DIFFRACTION;

DIRECTIONAL CRYSTALS; GROWTH FROM SOLUTION; HIGH RESOLUTION X RAY DIFFRACTION; TGS CRYSTALS;

CRYSTAL GROWTH;

EID: 34547508887     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.200610788     Document Type: Article

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