Experimental and theoretical study of recovery mechanism of impurity effect by the addition of EDTA

Crystal Research and Technology

Volumn 42, Issue 5, 2007, Pages 424-431

  Asakuma, Y ^a   Nishimura, M ^a   Kimura, M ^a   Ang, H M ^b   Tade, M O ^b   Maeda, K ^a   Fukui, K ^a  

^a UNIVERSITY OF HYOGO   (Japan)

^b CURTIN UNIVERSITY   (Australia)

Author keywords

EDTA; Impurity effect; KDP crystal; Recovery mechanism

Indexed keywords

ADDITION REACTIONS; ADSORPTION; CHELATION; CRYSTAL GROWTH; IMPURITIES; METAL IONS;

CRYSTAL GROWTH RATE; IMPURITY EFFECTS; KDP CRYSTALS; RECOVERY MECHANISM;

CRYSTAL STRUCTURE;

EID: 34547500745     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.200610842     Document Type: Article

References (28)

1. L. A. Guzman, K. Maeda, S. Hirota, M. Yokota, and N. Kubota, J. Cryst. Growth 181, 272 (1997).
2. L. A. Guzman, K. Maeda, S. Hirota, and N. Kubota, J. Cryst. Growth 186, 438 (1998).
3. L. N. Rashkovich and N. V. Kronsky, J. Cryst. Growth 182, 434 (1999).
4. K. Sangwal, J. Cryst. Growth 242, 215 (2002).
5. N. Zaitseva, L. Carman, I. Smolsky, R. Torres, and M. Yan, J. Cryst. Growth 204, 512 (1999).
6. K. Sangwal, J. Torrent-Burgues, P. Gorostiza, and F. Sanz, Cryst. Res. Technol. 34, 667 (1999).
7. S. A. de Vries, et al., J. Cryst. Growth 205, 202 (1999).
8. Y. Shangfeng, S. Genbo, L. Zhengdong, and J. Rihong, J. Cryst. Growth 197 383 (1999).
9. K. Srinivasan, K. Meera, and P. Ramasamy, Cryst. Res. Technol. 35, 291 (2000).
10. V. A. Kuznetsov, T. T. Okhrimenko, and Miroslawa Pak, J. Cryst. Growth 193, 164 (1998).
11. G. W. Lu, H. R. Xia, S. Q. Zhang, X. Sun, and Z. S. Gao, J. Cryst. Growth 233, 730 (2001).
12. N. P. Rajesh, K. Meera, P. S. Raghavanm, and P. Ramasamy, J. Cryst. Growth 213, 389 (2000).
13. X. Sun, X. Xu, Z. Gao, Y. Fu, S. Wang, H. Zeng, and Y. Li, J. Cryst. Growth 217, 465 (2001).
14. K. Srinivasan, K. Meera, and P. Ramasamy, Mat. Sci. Eng. B84, 233 (2001).
15. Y. Asakuma, M. Kimura, K. Maeda, K. Fukui, M. Ang, and M. Tade, CHEMCON 2005.
16. K. Maeda, A. Sonoda, H. Miki, Y. Asakuma, and K. Fukui, Cryst. Res. Technol. 39, 1006 (2004).
17. K. Fukui and K. Maeda, J. Chem. Phys. 109, 7468 (1998).
18. K. Fukui and K. Maeda, Chem. Eng. Sci. 57, 3133 (2002).
19. D. Stockigt, Chem. Phys. Lett. 250, 387 (1996).
20. J. Chen, T. H.Wong, and P. D.Kleiber, Chem. Phys. Lett. 307, 21 (1999).
21. Y. Shangfeng, S. Genbo, T. Jing, M. Bingwei, W. Jianmin, and L. Zhengdong, J. Cryst. Growth 203, 425 (1999).
22. L. A. Guzman, K. Maeda, and S. Hirota, J. Chem. Eng. Jpn. 31, 295 (1998).
23. S. Hirota, H. Miki, K. Fukui, and K. Maeda, J. Cryst. Growth 235, 541 (2002).
24. S. V. Verdaguer and L. L. Clemente, J. Cryst. Growth 79, 198 (1986).
25. Y. J. Fu, Z. S. Gao, J. M. Lie, Y. P. Li, H. Zeng, and M. H. Jiang, J. Cryst. Growth 198/199, 682 (1999).
26. Y. Asakuma, Q. Li, H. M.Ang, M. O. Tade, K. Maeda, and K. Fukui, WCPT5 2006.
27. E. A. Salter, A. Wierzbicki, and T. Land, Int. J. Quant. Chem. 100, 740 (2004).
28. D. Xu, D. Xue, and H. Ratajczak, J. Mol. Struct. 740, 37 (2005).