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Volumn 12, Issue 5, 2000, Pages 507-509

Semiconductor Microlenses Fabricated by One-Step Wet Etching

Author keywords

Chemical etching; Diffusion process; Microlens; Refraction; Semiconductor materials

Indexed keywords


EID: 0000697895     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.841268     Document Type: Article
Times cited : (41)

References (9)
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  • 2
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  • 3
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  • 4
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    • Large-numerical - Aperture microlens fabrication by one-step etching and mass-transport smoothing
    • Z. L. Liau, D. E. Mull, C. L. Dennis, and R. C. Williamson, "Large-numerical - Aperture microlens fabrication by one-step etching and mass-transport smoothing," Appl. Phys. Lett., vol. 64, pp. 1484-1486, 1994.
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  • 5
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    • GaAs microlens arrays grown by shadow masked MOVPE
    • G. M. Peake, S. Z. Sun, and S. D. Hersee, "GaAs microlens arrays grown by shadow masked MOVPE," J. Electron. Mater., vol. 26, pp. 1134-1138, 1997.
    • (1997) J. Electron. Mater. , vol.26 , pp. 1134-1138
    • Peake, G.M.1    Sun, S.Z.2    Hersee, S.D.3
  • 7
    • 0027664531 scopus 로고
    • Integrated optical modeshape adapters in InGaAsP/InP for efficient fiber-to-waveguide coupling
    • T. Brenner and H. Melchior, "Integrated optical modeshape adapters in InGaAsP/InP for efficient fiber-to-waveguide coupling," IEEE Photon. Technol. Lett., vol. 5, pp. 1053-1056, 1993.
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  • 8
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    • High-power low-divergence semiconductor lasers for GaAs-based 980-nm and InP-based 1550-nm applications
    • H. Jeon, J.-M. Verdiell, M. Ziari, and A. Mathur, "High-power low-divergence semiconductor lasers for GaAs-based 980-nm and InP-based 1550-nm applications," IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 1344-1350, 1997.
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  • 9
    • 0032090248 scopus 로고    scopus 로고
    • High power narrow divergence DFB laser diode at 1.55 μm
    • H. Jeon, A. Mathur, and M. Ziari, "High power narrow divergence DFB laser diode at 1.55 μm," Electron. Lett., vol. 34, pp. 1313-1315, 1998.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.