Growth of heavily boron-doped polycrystalline superconducting diamond

New Diamond and Frontier Carbon Technology

Volumn 17, Issue 1, 2007, Pages 1-10

  Umezawa, Hitoshi ^a,c   Takenouchi, Tomohiro ^a   Kobayashi, Kensaku ^a   Takano, Yoshihiko ^b   Nagao, Masanori ^b   Tachiki, Minoru ^b   Hatano, Takeshi ^b   Kawarada, Hiroshi ^a  

^a WASEDA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Diamond; Heavily boron doped; Superconductivity; Transition temperature

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); FILM GROWTH; POLYCRYSTALLINE MATERIALS; SUPERCONDUCTING MATERIALS; SUPERCONDUCTING TRANSITION TEMPERATURE; SUPERCONDUCTIVITY;

FACETED GROWTH; HEAVILY BORON-DOPED; POLYCRYSTALLINE DIAMOND FILMS;

DIAMOND FILMS;

EID: 34547356614     PISSN: 13449931     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)

1. F. P. Bundy, H. T. Hall, H. M. Strong and R. H. Wentorf: Nature 176 (1955) 51.
2. S. Matsumoto, Y. Sato, M. Kamo and N. Setaka: Jpn. J. Appl. Phys. 21 (1982) L183.
3. M. Kamo, Y. Sato, S. Matsumoto and N. Setaka: J. Cryst. Growth 62 (1983) 642.
4. T. H. Borst and O. Weis: Phys. Status Solidi A154 (1996) 423.