A new level-up shifter for high speed and wide range interface in ultra deep sub-micron

Proceedings - IEEE International Symposium on Circuits and Systems

Volumn , Issue , 2005, Pages 1063-1065

  Koo, Kyoung Hoi ^a   Seo, Jin Ho ^a   Ko, Myeong Lyong ^a   Kim, Jae Whui ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

90NM CMOS; CIRCUIT TECHNIQUES; CORE VOLTAGES; DEEP SUB-MICRON; DUTY RATIOS; I/O INTERFACES; I/O VOLTAGE; LEVEL SHIFTER; LEVEL-UP SHIFTERS; NMOS TRANSISTORS; PROCESS STEPS; STATIC POWER CONSUMPTION;

EID: 34547348180     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCAS.2005.1464775     Document Type: Conference Paper

References (3)

1. T.F Knight and A. Krymm, "A self-terminating low-voltage swing CMOS output driver," IEEE J. Solid-State Circuits, vol. 23, no.2, pp.457-464, Apr. 1988.
2. Harold Pilo and Steve Lamphier., "A 300MHz, 3.3V 1Mb SRAM fabricated in a 0.5um CMOS process," ISSCC. Digest of Technical Papers, vol. 31, no. 12, pp. 148-149, Feb. 1993.
3. Wen-Tai Wang, et al., "Level Shifters for high-Speed 1V to 3.3V Interfaces in a 0.13um Cu-Interconnection/Low-k CMOS Technology," Proc. Of Symp. On VLSI Circuits, pp. 307-310, June 2001.