Integral evaluation in semiconductor device modelling using simulated annealing with Bose-Einstein statistics

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Volumn 20, Issue 4, 2007, Pages 197-215

  Cole, E A B ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

Bose Einstein condensation; Bose Einstein statistics; Genetic algorithms; HEMT; Simulated annealing; Tsallis statistics

Indexed keywords

BOSE-EINSTEIN CONDENSATION; COST FUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRAL EQUATIONS; PARAMETER ESTIMATION; SIMULATED ANNEALING; STATISTICS;

BOSE-EINSTEIN STATISTICS; FERMI INTEGRALS; TSALLIS STATISTICS;

SEMICONDUCTOR DEVICES;

EID: 34547323003     PISSN: 08943370     EISSN: 10991204     Source Type: Journal    
DOI: 10.1002/jnm.649     Document Type: Article

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