Transport properties of the orbital Kondo effect via quantum dot systems with plural electrons

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 2, 2007, Pages 492-495

  Sakano, R ^a   Kita, T ^a   Ohashi, T ^b   Suga, S ^a   Kawakami, N ^a  

^a OSAKA UNIVERSITY   (Japan)

^b RIKEN   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANDERSON IMPURITY; HALF FILLING; NONCROSSING APPROXIMATION;

ELECTRIC CONDUCTANCE; ELECTRON TRANSPORT PROPERTIES; KONDO EFFECT; THERMOELECTRIC POWER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34547233701     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200673321     Document Type: Conference Paper

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