메뉴 건너뛰기




Volumn , Issue , 2006, Pages 1057-1060

Reliability modeling and management in dynamic microprocessor-based systems

Author keywords

Dynamic reliability management; Electromigration; Modeling; Oxide breakdown; Thermal cycling

Indexed keywords

DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTROMIGRATION; RELIABILITY ANALYSIS; THERMAL CYCLING;

EID: 34547166614     PISSN: 0738100X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/1146909.1147174     Document Type: Conference Paper
Times cited : (60)

References (11)
  • 1
    • 49549091691 scopus 로고    scopus 로고
    • The case for lifetime reliability-aware microprocessors
    • J. Srinivasan, et al, "The case for lifetime reliability-aware microprocessors." Int. Symp. Computer Architecture, 2004.
    • (2004) Int. Symp. Computer Architecture
    • Srinivasan, J.1
  • 2
    • 27944492950 scopus 로고    scopus 로고
    • Interconnect lifetime prediction under dynamic stress for reliability-aware design
    • Z. Lu, et. al, "Interconnect lifetime prediction under dynamic stress for reliability-aware design." Int. Conf. on Computer-Aided Design, 2004.
    • (2004) Int. Conf. on Computer-Aided Design
    • Lu, Z.1    et., al.2
  • 3
    • 85115243338 scopus 로고
    • Cumulative damage in fatigue
    • M. A. Miner, "Cumulative damage in fatigue," Journal of App. Mech. 67, 1945.
    • (1945) Journal of App. Mech , vol.67
    • Miner, M.A.1
  • 4
    • 0038529280 scopus 로고    scopus 로고
    • Physical and Predictive Models of Ultra Thin Oxide Reliability in CMOS Devices and Circuits
    • J. H. Stathis, "Physical and Predictive Models of Ultra Thin Oxide Reliability in CMOS Devices and Circuits," IEEE Trans. Dev. & Mater. Reliabil. 1, 2001.
    • (2001) IEEE Trans. Dev. & Mater. Reliabil , vol.1
    • Stathis, J.H.1
  • 5
    • 3743115412 scopus 로고
    • A consistent model for intrinsic breakdown in ultra-thin oxides
    • R. Degraeve, et al, "A consistent model for intrinsic breakdown in ultra-thin oxides," Int. Electron Devices Meeting, p. 866, 1995.
    • (1995) Int. Electron Devices Meeting , pp. 866
    • Degraeve, R.1
  • 6
    • 0014630193 scopus 로고
    • Electromigration failure modes for aluminum metallization in semiconductor devices
    • J. R. Black, "Electromigration failure modes for aluminum metallization in semiconductor devices," Proc. of IEEE 57, 1969.
    • (1969) Proc. of IEEE , vol.57
    • Black, J.R.1
  • 7
    • 2442674444 scopus 로고    scopus 로고
    • An electromigration and thermal model of power wires for a priori high-level reliability prediction
    • M. Casu, et al, "An electromigration and thermal model of power wires for a priori high-level reliability prediction," IEEE Tran. On VLSI Systems 12, 2004.
    • (2004) IEEE Tran. On VLSI Systems , vol.12
    • Casu, M.1
  • 11
    • 33646922758 scopus 로고    scopus 로고
    • HotSpot: Techniques for modeling thermal effects at the processor-architecture level
    • K. Skadron, et al, "HotSpot: Techniques for modeling thermal effects at the processor-architecture level," Int. Workshop on THERMal Investigations of ICs and Sys., 2002
    • (2002) Int. Workshop on THERMal Investigations of ICs and Sys
    • Skadron, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.