Effects of O2 partial pressure and Ga atmosphere on the luminescence of native defects in Β- Ga2 O3 phosphor

Journal of the Electrochemical Society

Volumn 154, Issue 6, 2007, Pages

  Liu, Zhongshi ^a   Jing, Xiping ^a   Wang, Lingxuan ^b  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF CHEMISTRY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; GALLIUM; LUMINESCENCE; PARAMAGNETIC RESONANCE; PARTIAL PRESSURE; PHOSPHORS; SEMICONDUCTING GALLIUM COMPOUNDS;

HYPERFINE INTERACTION PARAMETERS;

OXYGEN;

EID: 34547151751     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2717505     Document Type: Article

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