Lateral InP/InGaAs double heterojunction phototransistor over a trenched interdigitated finger structure

Solid-State Electronics

Volumn 51, Issue 7, 2007, Pages 1023-1028

  Kim, Junghwan ^a   Johnson, W B ^b   Kanakaraju, S ^a   Lee, Chi H ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b LABORATORY FOR PHYSICAL SCIENCES   (United States)

Author keywords

Epitaxial layers; Optoelectronic devices; Phototransistors; Semiconductor heterojunctions

Indexed keywords

ACTIVE AREA DEVICE; DOUBLE HETEROJUNCTION PHOTOTRANSISTOR (DHPT); OPTICAL GAINS;

EPITAXIAL LAYERS; FREQUENCY RESPONSE; INDIUM PHOSPHIDE; OPTOELECTRONIC DEVICES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 34447524887     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.05.010     Document Type: Article

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