Two dimensional mapping of pn junctions by electron holography

Solid State Phenomena

Volumn 63-64, Issue , 1998, Pages 525-528

  Rau, W D ^a   Schwander, P ^a   Ourmazd, A ^a  

^a IHP   (Germany)

Author keywords

2D Mapping of pn Junctions; Dopant Diffusion; Electron Holography; TEM

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; ELECTROSTATICS; HOLOGRAPHY; MOSFET DEVICES; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON HOLOGRAPHY;

SEMICONDUCTOR JUNCTIONS;

EID: 3442891031     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.63-64.525     Document Type: Article

References (10)

1. The National Technology Roadmap for Semiconductors, SIA Semiconductor Industry Association, San Jose, CA 95110, USA (1997), http://www.sematech.org/public/roadmap/index.htm
2. A.C. Diebold, M.R. Kump, J.J. Kopanski, D.G. Seiler, J. Vac. Sci. Technol. B, 14 (1) 196 (1996)
3. R.N. Kleiman, et al., IEDM Tech. Dig., 691 (1997).
4. S. Frabboni, G. Matteucci, G. Pozzi, and M. Vanzi, Phys. Rev. Lett. 55, 2196 (1985)
5. M. McCartney, et al., Appl. Phys. Lett. 65 (20), 2603 (1994)
6. H. Lichte, in Handbook of Microscopy, Eds S. Amelincks, D. van Dyck, J. van Landuyt, G. van Tendeloo, VCH Publ., 1997.
7. Introduction to Electron Holography, Eds E.Voelkl, D. Joy and L. Allard, Plenum Press NY, in press
8. J.C.H. Spence, Experimental High Resolution Electron Microscopy (Oxford University Press, New York, 1988)
9. -3 as confirmed by SIMS measurements. This corresponds to a potential drop of 1.05 V across the pn junctions within a depletion layer width of 27 nm
10. W.D. Rau, et al., to be published