Surface dynamics during MBE growth of GaAs(001) monitored by in-situ reflectance difference spectroscopy

Physica Status Solidi C: Conferences

Volumn , Issue 8, 2003, Pages 3012-3016

  Medel Ruiz C I ^a   Balderas Navarro, R E ^a,b   Lastras Martinez A ^a  

^a INSTITUTO DE INVESTIGACIÓN EN COMUNICACIÓN ÓPTICA   (Mexico)

^b UNIVERSIDAD AUTÓNOMA DE SAN LUIS POTOSÍ   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; EXPERIMENTAL OBSERVATION; GAAS(001); HOMO EPITAXIES; MBE GROWTH; REFLECTANCE DIFFERENCE SPECTROSCOPY; STRAINED ISLANDS; SURFACE DYNAMICS;

SEMICONDUCTING GALLIUM; SURFACE RECONSTRUCTION;

GALLIUM ARSENIDE;

EID: 34347382915     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303846     Document Type: Conference Paper

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