Varistors based in the ZnO-Bi2O3 system: Microstructure control and properties

Journal of the European Ceramic Society

Volumn 27, Issue 13-15, 2007, Pages 3867-3872

  Peiteado, Marco ^a   Fernández, José F ^a   Caballero, Amador C ^a  

^a INSTITUTO DE CERÁMICA Y VIDRIO   (Spain)

Author keywords

Electrical properties; Grain growth; Sintering kinetics; Varistors; ZnO

Indexed keywords

BISMUTH COMPOUNDS; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; GRAIN GROWTH; MICROSTRUCTURE; SINTERING; ZINC OXIDE;

KINETIC ANALYSIS; MICROSTRUCTURE CONTROL; SINTERING VARIABLES; VARISTOR MICROSTRUCTURE; ZINC OXIDE GRAINS;

VARISTORS;

BISMUTH COMPOUNDS; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; GRAIN GROWTH; MICROSTRUCTURE; SINTERING; VARISTORS; ZINC OXIDE;

EID: 34347351236     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2007.02.046     Document Type: Article

References (21)

1. Matsuoka M. Nonohmic properties of zinc oxide ceramics. Jpn. J. Appl. Phys. 10 6 (1971) 736-746
2. Clarke D.R. Varistor ceramics. J. Am. Ceram. Soc. 82 3 (1999) 485-502
3. Gupta T.K. Application of zinc oxide varistors. J. Am. Ceram. Soc. 73 7 (1990) 1817-1840
4. Castro M.S., Nunez G.M., Resasco D.E., and Aldao C.M. Prebreakdown conduction in ZnO varistors. J. Am. Ceram. Soc. 75 4 (1992) 800-804
5. Fernández-Hevia D., Peiteado M., De Frutos J., Caballero A.C., and Fernández J.F. Wide range dielectric spectroscopy of ZnO-based varistors as a function of sintering time. J. Eur. Ceram. Soc. 24 6 (2004) 1205-1208
6. Leach C. Grain boundary structures in zinc oxide varistors. Acta Mater. 53 2 (2005) 237-245
7. Peiteado M. Zinc oxide-based ceramic varistors. Bol. Soc. Esp. Ceram. V 44 2 (2005) 77-87
8. Greuter F. Electrically active interfaces in ZnO varistors. Solid State Ionics 75 (1995) 67-78
9. Leite E.R., Nobre M.A.L., Longo E., and Varela J.A. Microstructural development of ZnO varistors during reactive liquid phase sintering. J. Mater. Sci. 31 20 (1996) 5391-5398
10. 3 system in the region of interest for varistors. J. Mater. Sci. 41 8 (2006) 2319-2325
11. Hozer L. Metal-oxide varistors. Semiconductor Ceramics: Grain Boundary Effects (1994), Polish Scientific Publishers, Warszawa, Poland p. 44-109
12. Olsson E., and Dunlop G.L. Characterization of individual interfacial barriers in a ZnO varistor material. J. Appl. Phys. 66 8 (1989) 3666-3675
13. Kang S.J.L., and Jung Y.I. Sintering kinetics at final stage sintering: model calculation and map construction. Acta Mater. 52 15 (2004) 4573-4578
14. 3-ZnO system. Bol. Soc. Esp. Ceram. V 45 3 (2006) 150-153
15. Lorentz A., Ott J., Harrer M., Preissner E.A., Whitehead A.H., and Schreiber M. Modified citrate gel techniques to produce ZnO-based varistors (Part I. Microstructural characterization). J. Electroceram. 6 1 (2001) 43-54
16. Peiteado M., Fernández J.F., and Caballero A.C. Processing strategies to control grain growth in ZnO based varistors. J. Eur. Ceram. Soc. 25 12 (2004) 2999-3003
17. 3 ceramics. J. Am. Ceram. Soc. 73 1 (1990) 106-114
18. Senda T., and Bradt R.C. Grain growth of zinc oxide during the sintering of zinc oxide-antimony oxide ceramics. J. Am. Ceram. Soc. 74 6 (1991) 1296-1302
19. 3 liquid-phase sintering. J. Am. Ceram. Soc. 75 9 (1992) 2529-2534
20. Chen Y.C., Shen Y.C., and Wu L. Grain growth processes in ZnO varistors with various valence states of manganese and cobalt. J. Appl. Phys. 62 12 (1991) 8363-8367
21. 3 vaporization from ZnO-based varistors. J. Eur. Ceram. Soc. 25 9 (2005) 1675-1680