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Volumn 27, Issue 13-15, 2007, Pages 3847-3850

Microwave performance of thin film ferroelectric varactors in the wide temperature range of -223 °C to +227 °C

Author keywords

BaTiO3 and titanates; Capacitors; Dielectric properties; Films; Microwave

Indexed keywords

BARIUM COMPOUNDS; DIELECTRIC PROPERTIES; FERROELECTRIC THIN FILMS; MICROWAVE FREQUENCIES; SUBSTRATES; TEMPERATURE;

EID: 34347347162     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2007.02.044     Document Type: Article
Times cited : (6)

References (12)
  • 1
    • 0242335952 scopus 로고    scopus 로고
    • Silicon substrate integrated high Q-factor parallel-plate ferroelectric varactors
    • Vorobiev A., Rundqvist P., Khamchane K., and Gevorgian S. Silicon substrate integrated high Q-factor parallel-plate ferroelectric varactors. Appl. Phys. Lett. 83 (2003) 1344-1346
    • (2003) Appl. Phys. Lett. , vol.83 , pp. 1344-1346
    • Vorobiev, A.1    Rundqvist, P.2    Khamchane, K.3    Gevorgian, S.4
  • 6
    • 0037416594 scopus 로고    scopus 로고
    • Layered Cu-based electrode for high-dielectric constant oxide thin film-base devices
    • Fan W., Saha S., Carlisle J.A., Auciello O., Chang R.P.H., and Ramesh R. Layered Cu-based electrode for high-dielectric constant oxide thin film-base devices. Appl. Phys. Lett. 82 (2003) 1452-1454
    • (2003) Appl. Phys. Lett. , vol.82 , pp. 1452-1454
    • Fan, W.1    Saha, S.2    Carlisle, J.A.3    Auciello, O.4    Chang, R.P.H.5    Ramesh, R.6
  • 11
    • 33745697520 scopus 로고    scopus 로고
    • 3 films. J. Appl. Phys., 2006, 99, 124112(1-11).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.