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Journal of Materials Science and Technology

Volumn 16, Issue 6, 2000, Pages 549-553

Effects of annealing on high-magnetoresistance tunnel junctions using Co75Fe25 ferromagnetic electrodes

(2) Han, X F a Miyazaki, T a

a TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; ELECTRODES; FERROMAGNETIC MATERIALS; ION BEAM LITHOGRAPHY; IRON; MAGNETORESISTANCE; PHOTOLITHOGRAPHY; TUNNEL JUNCTIONS;

BARRIER HEIGHT; BARRIER WIDTH; BREAKDOWN VOLTAGE; JUNCTION RESISTANCE; MICRO FABRICATION; TMR RATIO;

ANNEALING;

EID: 0034312069 PISSN: 10050302 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.