Effect of the silicon membrane flatness defect on the piezoresistive pressure sensor response

Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

Volumn 2, Issue , 2000, Pages 853-856

  Dibi, Z ^a   Boukabache, A ^b   Pons, P ^c  

^a UNIVERSITY OF BATNA   (Algeria)

^b Universite Mentouri Constantine   (Algeria)

^c LAAS CNRS   (France)

Author keywords

Flatness; Gauge; Membrane; Piezoresistivity; Pressure; Sensor

Indexed keywords

ELECTRICAL RESPONSE; FLATNESS; FLATNESS DEFECTS; FULL BRIDGE; GAUGE; MEMBRANE THICKNESS; NEW APPROACHES; PIEZO-RESISTORS; PIEZORESISTIVE PRESSURE SENSORS; PIEZORESISTIVITY; SENSOR SENSITIVITY; SILICON MEMBRANES; VOLTAGE OFFSETS;

DEFECTS; GAGES; PRESSURE EFFECTS; PRESSURE SENSORS;

MEMBRANES;

EID: 34250844868     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICECS.2000.913010     Document Type: Conference Paper

References (5)

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3. A. BOUKABACHE, G. BLASQUEZ, P. PONS Z.DIBI. Study of the thermal drift of the offset voltage of silicon pressure sensor The 6th IEEE International Conference on Electronics, circuits and systems Cyprus 1999, 1051-1054.
4. S.P. TIMOSHENKO, S.WOINOWSKY-KRIEGER. Theory of plates and shells. Mc GRAW-HILL, 1982
5. G. KAMINSKY Micromachining of silicon mechanical structures. J.Vac. Sci. Technol., B3(4),Jul/Aug. 1985