Investigation of thermal neutron induced soft error rates in commercial SRAMs with 0.35 μM to 90 NM technologies

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 212-216

  Olmos, Marcos ^a   Gaillard, Rémi ^a   Van Overberghe, Andreas ^b   Beaucour, Jérôme ^b   Wen, Shijie ^c   Sung, Chung ^c  

^a iRoC Technologies   (France)

^b INSTITUT LAUE LANGEVIN   (France)

^c CISCO SYSTEMS   (United States)

Author keywords

10B; Boron; Cross section; Single event upset (SEU); Soft error; Thermal neutrons

Indexed keywords

CROSS-SECTIONS; SINGLE-EVENT UPSET (SEU); SOFT ERROR RATES (SER); THERMAL NEUTRONS;

BIT ERROR RATE; ERROR ANALYSIS; NEUTRONS; THERMAL EFFECTS;

STATIC RANDOM ACCESS STORAGE;

EID: 34250750255     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251219     Document Type: Conference Paper

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