Accurate characterization on intrinsic gate oxide reliability using voltage ramp tests

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 625-626

  Fan, S C ^a   Lin, J C ^a   Oates, A S ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTANT VOLTAGE TESTING; INTRINSIC GATE OXIDES;

RELIABILITY; VOLTAGE CONTROL;

GATES (TRANSISTOR);

EID: 34250720007     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251294     Document Type: Conference Paper

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