Island and pit kinetics on the growing GaAs (0 0 1) surface studied by synchrotron X-ray diffraction

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 56-61

  Braun, Wolfgang ^a   Jenichen, Bernd ^a   Kaganer, Vladimir M ^a   Shtukenberg, Alexander S ^a   Däweritz, Lutz ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

A1. Surface processes; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Gallium compounds; B2. Semiconducting III V materials

Indexed keywords

GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SURFACE REACTIONS; SYNCHROTRON RADIATION; X RAY DIFFRACTION ANALYSIS;

SURFACE PROCESSES;

SEMICONDUCTOR GROWTH;

EID: 0037380428     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02312-6     Document Type: Conference Paper

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