Atomic-level simulation of non-equilibrium surface chemical reactions under plasma-wall interaction

Computer Physics Communications

Volumn 177, Issue 1-2 SPEC. ISS., 2007, Pages 108-109

  Hamaguchi, Satoshi ^a   Yamashiro, Masashi ^a   Yamada, Hideaki ^b  

^a OSAKA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Deposition; Etching; Molecular dynamics simulation; Organic polymer; Plasma processing

Indexed keywords

COMPUTER SIMULATION; DEPOSITION RATES; HYDROCARBONS; MOLECULAR DYNAMICS; NUMERICAL METHODS; PLASMA ETCHING; PLASMA INTERACTIONS; SPUTTERING; SUBSTRATES;

ATOMIC-SCALE MORPHOLOGY; INTERATOMIC POTENTIAL; MOLECULAR DYNAMICS SIMULATION; THERMAL-EQUILIBRIUM;

CHEMICAL REACTIONS;

EID: 34250648921     PISSN: 00104655     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cpc.2007.02.068     Document Type: Article

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