IIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET'S

IEEE Transactions on Electron Devices

Volumn 38, Issue 12, 1991, Pages 2695-

  Ransom, C M ^a   Jackson, T N ^a   DeGelormo, J F ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; SEMICONDUCTING GERMANIUM--ION IMPLANTATION;

GERMANIUM OXINITRIDE; SUMMARY ONLY; TRANSCONDUCTANCE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026366827     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.158709     Document Type: Article

References (1)

1. J. J. Rosenberg and S. C. Martin, IEEE Electron. Device Lett., vol. 9, p. 639, 1988.