Numerical modeling of high repetition rate pulsed laser crystallization of silicon films on glass

Materials Research Society Symposium Proceedings

Volumn 685, Issue , 2001, Pages 281-286

  Köhler, Jürgen R ^a   Dassow, Ralf ^a   Werner, Jürgen H ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; FILM THICKNESS; FINITE DIFFERENCE METHOD; GLASS; PULSED LASER APPLICATIONS; SEMICONDUCTING SILICON; SOLIDIFICATION;

AMORPHOUS SILICON FILMS; GRAIN WIDTH; LINEAR CORRELATION; REPETITION RATE;

SEMICONDUCTING FILMS;

EID: 34249877160     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-685-d10.3.1     Document Type: Conference Paper

References (7)

1. R. S. Sposili and J. S. Im, Appl. Phys. Lett. 69, 2864 (1996).
2. R. Dassow, J. R. Köhler, M. Nerding, H. P. Strunk, Y. Helen, K. Mourgues, O. Bonnaud, T. Mohammed-Brahim, and J. H. Werner, Mat. Res. Soc. Proc. 621, in press.
3. R. Cerny, and P. Prikryl, Phys. Rev. B 57, 194 (1998).
4. R. F. Wood, G. A. Geist, and C. L. Liu, Phys. Rev. B 53, 15863 (1996).
5. V. V. Gupta, H. Jin Song, and J. S. Im, Appl. Phys. Lett. 71, 99 (1997).
6. G. Andrä, F. Falk, C. Mühlig, A. Kalbac, and R. Cerny, Appl. Phys. A 67, 513 (1998).
7. R. Dassow, "Laserkristallisation von Silicium", Thesis (Institut für Physikalische Elektronik, Universität Stuttgart, 2001).