SiON gate dielectric formation by rapid thermal oxidation of nitrided Si

13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005

Volumn , Issue , 2005, Pages 135-138

  Everaert, J L ^a   Conard, T ^a   Schaekers, M ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; ELECTRIC CONDUCTIVITY; GATE DIELECTRICS; GATES (TRANSISTOR); INTERNET PROTOCOLS; RAPID THERMAL ANNEALING; SEMICONDUCTOR MATERIALS; X RAY PHOTOELECTRON SPECTROSCOPY;

65NM NODES; GATE LEAKAGES; NON CONTACTS; PROCESS PARAMETERS; RAPID THERMAL OXIDATIONS; SION GATE DIELECTRICS; STATE CURRENTS; TRANSISTOR PERFORMANCES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 34249808378     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2005.1613695     Document Type: Conference Paper

References (3)

1. F. Cubaynes, S. Passefort, K. Eason, X. Zhang, L. Date, D. Pique, T. Conard, A. Rothschild, M. Schaekers, IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 2002, p.1.
2. D. Matsushita, K. Muraoka, Y. Nakasaki, K. Kato, S. Inumiya, K. Eguchi, M. Takayanagi, Symposium on VLSI Technology Digest of Technical Papers, 2004, p. 172
3. P.A. Kraus, K. Ahmed, T.C. Chua, M. Ershov, H. Karbasi, C. Olsen, F. Nouri, J. Holland, R. Zhao, G. Miner, A. Lepert, Symposium on VLSI Technology Digest of Technical Papers, 2003, p. 143