Field emission of GaN-filled carbon nanotubes: High and stable emission, current

Journal of Nanoscience and Nanotechnology

Volumn 7, Issue 3, 2007, Pages 1080-1083

  Liao, L ^a,b   Lie, J C ^b   Liu, C ^b   Xu, Z ^a   Wang, W L ^a   Liu, S ^a   Bai, X D ^a   Wang, E G ^a  

^a INSTITUTE OF PHYSICS   (China)

^b WUHAN UNIVERSITY   (China)

Author keywords

Field emission; GaN nanocables; GaN filled carbon nanotubes; Nanotube filling

Indexed keywords

CABLE-LIKE; FIELD ELECTRON EMISSION (FEE); FIELD EMISSION (FE) PROPERTIES; FIELD EMITTERS; FILLED CARBON NANOTUBES; HIGH CURRENTS; HIGH POWERS; MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (MPECVD); NANO TUBE; SHELL STRUCTURES; STABLE EMISSIONS; STRUCTURAL CHARACTERIZATIONS; WURTZITE STRUCTURES;

CARBON; FARM BUILDINGS; FIELD EMISSION; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLIZING; MICROWAVES; NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM; SHELLS (STRUCTURES); VAPOR DEPOSITION; ZINC SULFIDE;

CARBON NANOTUBES;

CARBON NANOTUBE; GALLIUM; GALLIUM NITRIDE; UNCLASSIFIED DRUG;

ARTICLE; CHEMISTRY; ELECTROCHEMISTRY; ELECTRON MICROSCOPY; NANOTECHNOLOGY; POWDER DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SCANNING TRANSMISSION ELECTRON MICROSCOPY; ULTRASTRUCTURE;

ELECTROCHEMISTRY; GALLIUM; MICROSCOPY, ELECTRON; MICROSCOPY, ELECTRON, SCANNING; MICROSCOPY, ELECTRON, SCANNING TRANSMISSION; NANOTECHNOLOGY; NANOTUBES, CARBON; POWDER DIFFRACTION;

EID: 34249725567     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2007.413     Document Type: Conference Paper

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