Characteristics of nanocrystalline AlN:Er films co-deposited by using AlN, Er, and SiO2 targets

Materials Letters

Volumn 61, Issue 17, 2007, Pages 3740-3745

  Lim, J W ^a   Takayama, W ^b   Zhu, Y F ^c   Bae, J W ^d   Wang, J F ^d   Ji, S Y ^d   Mimura, K ^d   Yoo, J H ^e   Isshiki, M ^d  

^a Korea Institute of Geosceince and Mineral Resources   (South Korea)

^b JAPAN RADIO CO LTD   (Japan)

^c BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^d TOHOKU UNIVERSITY   (Japan)

^e National Nano Fab Center (NNFC)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; FILMS; PHOTOLUMINESCENCE; TEMPERATURE CONTROL;

AMORPHOUS MATRIX; VISIBLE LUMINESCENCE CENTER;

NANOCRYSTALLINE MATERIALS;

EID: 34249710231     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2006.12.026     Document Type: Article

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