Modification of inner pores with silicon carbide whiskers onto the Al 2O3 substrate by CVI process

Key Engineering Materials

Volumn 287, Issue , 2005, Pages 212-219

  Park, W S ^a   Choi, D J ^a   Kim, H D ^b  

^a Yonsei University   (South Korea)

^b Korea Institute of Machine and Materials   (South Korea)

Author keywords

Chemical vapor deposition; Pore structure; Silicon carbide; Whisker

Indexed keywords

ALUMINA; CHEMICAL VAPOR DEPOSITION; CRYSTAL WHISKERS; INFILTRATION; PORE STRUCTURE; PRESSURE EFFECTS;

CHEMICAL VAPOR INFILTRATION (CVI); DEPOSITION MORPHOLOGY; PORE MORPHOLOGY; POROUS CERAMIC FILTERS;

SILICON CARBIDE;

EID: 34249679731     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: 10.4028/0-87849-965-2.212     Document Type: Conference Paper

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