The upper critical field in micro-SiC doped MgB2 fabricated by a two-step reaction method

Superconductor Science and Technology

Volumn 20, Issue 6, 2007, Pages 549-553

  Yan, S C ^a,b   Yan, G ^b   Lu, Y F ^b   Zhou, L ^a,b  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^b NORTHWEST INSTITUTE FOR NONFERROUS METAL RESEARCH   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); MICROSTRUCTURE; PHASE COMPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; X RAY DIFFRACTION;

CRITICAL FIELDS; TWO-STEP REACTION METHOD;

MAGNESIUM COMPOUNDS;

EID: 34249290065     PISSN: 09532048     EISSN: 13616668     Source Type: Journal    
DOI: 10.1088/0953-2048/20/6/010     Document Type: Article

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