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Superconductor Science and Technology

Volumn 18, Issue 5, 2005, Pages 658-666

High transport critical current density and large Hc2 and H irr in nanoscale SiC doped MgB2 wires sintered at low temperature

(9) Soltanian, S a,b Wang, X L a Horvat, J a Dou, S X a Sumption, M D c Bhatia, M c Collings, E W c Munroe, P d Tomsic, M e

a UNIVERSITY OF WOLLONGONG (Australia)

b UNIVERSITY OF KURDISTAN (Iran)

c OHIO STATE UNIVERSITY (United States)

d UNIVERSITY OF NEW SOUTH WALES (Australia)

e Hyper Tech Research Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GRAIN BOUNDARIES; HEAT TREATMENT; PARTICLE SIZE ANALYSIS; SILICON CARBIDE; SINTERING;

FLUX PINNING; GRAIN BOUNDARY STRUCTURE; NANO-IMPURITIES; PHASE FORMATION;

MAGNESIUM COMPOUNDS;

EID: 24644500704 PISSN: 09532048 EISSN: None Source Type: Journal
DOI: 10.1088/0953-2048/18/5/013 Document Type: Article

Times cited : (97)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.