Solid state properties of oligomers containing dithienothiophene or fluorene residues suitable for field effect transistor devices

Thin Solid Films

Volumn 515, Issue 18, 2007, Pages 7318-7323

  Porzio, William ^a   Destri, Silvia ^a   Giovanella, Umberto ^a   Pasini, Mariacecilia ^d   Marin, Luminita ^a,b   Iosip, Mariana Dana ^a,b   Campione, Marcello ^c  

^a CNR   (Italy)

^b PETRU PONI INSTITUTE OF MACROMOLECULAR CHEMISTRY   (Romania)

^c UNIVERSITY OF MILANO BICOCCA   (Italy)

^d NONE

Author keywords

Field effect transistors; High vacuum evaporation; Organic oligomers; Solid state films

Indexed keywords

ELECTRODES; ELECTRON AFFINITY; FIELD EFFECT TRANSISTORS; LIGHT POLARIZATION; SOLID STATE DEVICES; THERMODYNAMIC PROPERTIES;

DITHIENOTHIOPHENE; HIGH-VACUUM EVAPORATION; ORGANIC OLIGOMERS; SOLID STATE FILMS;

OLIGOMERS;

EID: 34249113123     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.02.081     Document Type: Article

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