Temperature dependence of exchange bias and coercivity in (Ga,Mn)As-MnO bilayer structures

IEEE Transactions on Magnetics

Volumn 43, Issue 6, 2007, Pages 3013-3015

  Ge, Zhiguo ^a   Lim, Weng Lee ^a   Cho, Yong Jin ^a   Liu, Xinyu ^a   Furdyna, Jacek K ^a   Dobrowolska, Malgorzata ^a  

^a UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

Diluted magnetic semiconductor; Exchange bias; Planar Hall effect

Indexed keywords

COERCIVE FORCE; GALVANOMAGNETIC EFFECTS; MAGNETIC COUPLINGS; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; THERMAL EFFECTS;

DILUTED MAGNETIC SEMICONDUCTOR; EXCHANGE BIAS; PLANAR HALL EFFECT;

MANGANESE COMPOUNDS;

EID: 34249027748     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2007.893348     Document Type: Article

References (18)

1. W. H. Meiklejohn and C. P. Bean, "New magnetic anisotropy," Phys. Rev., vol. 102, pp. 1413-1414, 1956.
2. J. Nogués and I. K. Schuller, "Exchange bias," J. Magn. Magn. Mater., vol. 192, pp. 203-232, 1999.
3. M. Kiwi, "Exchange bias theory," J. Magn. Magn. Mater., vol. 234, pp. 584-595, 2001.
4. H. Ohno, "Making nonmagnetic semiconductors ferromagnetic," Science, vol. 281, pp. 951-956, 1998.
5. T. Dietl, H. Ohno, and F. Matsukura, "Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors," Phys. Rev. B., Condens. Mater., vol. 63, pp. 195205-1-195205-21, 2001.
6. A. H. MacDonald, P. Schiffer, and N. Samarth, "Ferromagnetic semiconductors: Moving beyond (Ga,Mn)As," Nature Mater., vol. 4, pp. 195-202, 2005.
7. X. Liu, Y. Sasaki, and J. K. Furdyna, "Enhancement of magnetic coercivity and ferromagnetic transition temperature by proximity effects in the GaMnAs-ZnMnSe multilayer system," Appl. Phys. Lett., vol. 79, pp. 2414-2416, 2001.
8. J. K. Furdyna, X. Liu, Y. Sasaki, S. J. Potashnik, and P. Scheiffer, "Ferromagnetic III-Mn-V semiconductor multilayers: Manipulation of magnetic properties by proximity effects and interface design," J. Appl. Phys., vol. 91, pp. 7490-7495, 2002.
9. K. F. Eid, M. B. Stone, O. Maksimov, T. C. Shih, K. C. Ku, W. Fadgen, C. J. Palmstrøm, P. Schiffer, and N. Samarth, "Exchange biasing of the ferromagnetic semiconductor (Ga,Mn)As by MnO," J. Appl. Phys., vol. 97, pp. 10D304-1-10D304-6, 2005.
10. xAs heterostructures," cond-mat/0409108.
11. K. Dziatkowski, Z. Ge, X. Liu, and J. K. Furdyna, "Identification of unidirectional anisotropy in exchange-biased MnO/GaMnAs bilayers using ferromagnetic resonance," Appl. Phys. Lett., vol 88, pp. 142513-1-142513-3, 2006.
12. Z. Ge, W. L. Lim, S. Shen, Y. Y. Zhou, X. Liu, J. K. Furdyna, and M. Dobrowolska, "Magnetization reversal in (Ga,Mn)As/MnO exchange-biased structures: Investigation by planar Hall effect," Phys. Rev. B ., Condens. Mater., vol. 75, pp. 014407-1-014407-11, 2007.
13. C. Hou, H. Fujiwara, K. Zhang, A. Tanaka, and Y. Shimizu, "Temperature dependence of the exchange-bias field of ferromagnetic layers coupled with antiferromagnetic layers," Phys. Rev. B., Condens. Mater., vol. 63, pp. 024411-1-024411-6, 2000.
14. K. Nishioka, S. Shigematsu, T. Imagawa, and S. Narishige, "Thickness effect on ferro/antiferromagnetic coupling of Co/CrMnPt systems," J. Appl. Phys., vol. 83, pp. 3233-3238, 1996.
15. Z. Li and S. Zhang, "Thickness effect on ferro/antiferromagnetic coupling of Co/CrMnPt systems," Phys. Rev. B., Condens. Mater., vol. 61, pp. R14897-R14900, 2000.
16. M. D. Stiles and R. D. McMichael, "Coercivity in exchange-bias bilayers," Phys. Rev. B., Condens. Mater., vol. 63, pp. 064 405-1-064 405-10, 2001.
17. K. Nishioka, C. Hou, H. Fujiwara, and R. D. Metzger, "Grain size effect on ferro-antiferromagnetic coupling of NiFe/FeMn systems," J. Appl. Phys., vol. 80, pp. 4528-4533, 1996.
18. J. Hu, G. Jin, A. Hu, and Y. Ma, "Temperature dependence of exchange bias and coercivity in ferromagnetic/antiferromagnetic bilayers," Eur. Phys. J. B., vol. 40, pp. 265-271, 2004.