Intrinsic and defect-assisted trapping of electrons and holes in HfO2: an ab initio study

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2362-2365

  Ramo, D Muñoz ^a   Gavartin, J L ^b   Shluger, A L ^a   Bersuker, G ^c  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b Accelris ^*  (United Kingdom)

^c SEMATECH   (United States)

Author keywords

Ab initio calculations; Electron traps; HfO2; High k; Polarons

Indexed keywords

DEFECTS; DIFFUSION BARRIERS; ELECTRON TRAPS; HOLE TRAPS; IONIZATION POTENTIAL; NEGATIVE IONS; OXYGEN; POLARONS;

ELECTRON POLARONS; HOPPING DIFFUSION BARRIERS; POLARON STATES;

HAFNIUM COMPOUNDS;

EID: 34248644038     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.001     Document Type: Article

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