Characterization of Mn-doped 3C-SiC prepared by ion implantation

Journal of Applied Physics

Volumn 101, Issue 9, 2007, Pages

  Takano, Fumiyoshi ^a   Wang, Wenhong ^a   Akinaga, Hiro ^a   Ofuchi, Hironori ^b   Hishiki, Shigeomi ^c   Ohshima, Takeshi ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DICHROISM; DOPING (ADDITIVES); FERROMAGNETISM; HIGH TEMPERATURE OPERATIONS; ION IMPLANTATION; MANGANESE;

FERROMAGNETIC ORDERING; HOMOEPITAXIAL WAFERS; IMPLANTATION PROCESSES; TRANSMISSION MAGNETIC CIRCULAR DICHROISM;

SILICON CARBIDE;

EID: 34248592951     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2709749     Document Type: Conference Paper

References (15)

1. See, e. g., H. Akinaga and H. Ohno, IEEE Trans. Nanotechnol. 1536-125X 1, 19 (2002); I. Žutić, J. Fabian, and S. D. Sarma, Rev. Mod. Phys. 76, 323 (2004).
2. See, e. g., H. Akinaga and H. Ohno, IEEE Trans. Nanotechnol. 1536-125X 1, 19 (2002); I. Žutić, J. Fabian, and S. D. Sarma, Rev. Mod. Phys. 76, 323 (2004).
3. N. Theodoropoulou, J. Vac. Sci. Technol. A 20, 579 (2002).
4. M. Syväjärvi, V. Stanciu, M. Izadifard, W. M. Chen, I. A. Buyanova, P. Svedlindh, and R. Yakimova, Mater. Sci. Forum 457-460, 747 (2004).
5. M. A. Capano and R. J. Trew, MRS Bull. 22, 19 (1997).
6. V. A. Gubanov, C. Boekema, and C. Y. Fong, Appl. Phys. Lett. 78, 216 (2001).
7. M. S. Miao and W. R. L. Lambrecht, Phys. Rev. B 68, 125204 (2003).
8. V. L. Shaposhnikov and N. A. Sobolev, J. Phys.: Condens. Matter 16, 1761 (2004).
9. Y.-S. Kim, Y.-C. Chung, and S.-C Yi, Mater. Sci. Eng., B 194-196, 194 (2006).
10. D. K. Ferry, Phys. Rev. B 12, 2361 (1975).
11. T. Ohshima, A. Uedono, O. Eryu, K. K. Lee, A. Abe, H. Itoh, and K. Nakashima, Mater. Sci. Forum 433-436, 633 (2003).
12. K. Ando, in Magneto-Optics, Springer Series in Solid-State Science Vol. 128, edited by, S. Sugano, and, N. Kojima, (Springer, Berlin, 2000), p. 211.
13. Y. Goldberg, M. E. Levinshtein, and S. L. Rumyantsev, in Properties of Advanced Semiconductor Materials GaN, AlN, SiC, BN, SiC, SiGe, edited by, M. E. Levinshtein, S. L. Rumyantsev, and, M. S. Shur, (Wiley, New York, 2001), p. 93.
14. D. Kwon, J. Magn. Magn. Mater. 282, 240 (2004).
15. Carbon-doped manganese silicides such as Mn5 Si3 and Mn5 Si2 are experimentally known to show a ferromagnetism with a high TC. Actually, as reported in F. Takano, H. Akinaga, H. Ofuchi, S. Kuroda, and K. Takita, J. Appl. Phys. 99, 08J506 (2006), the Mn5 Si2 related ferromagnet, though the origin of the ferromagnetism is unclear. At present, we consider that the Mn5 Si2 formed in the present system is not related to the observed ferromagnetism, since the TC and the MCD spectral shape obtained in each study are different. However, a more detailed investigation such as an x-ray magnetic circular dichroism (XMCD) analysis is necessary to determine the origin of the ferromagnetism shown in the present system.