Quantum dots of Ge in a GaAs/ZnSe/Ge unstrained heterosystem: Fabrication and properties

Nanotechnology

Volumn 12, Issue 4, 2001, Pages 437-440

  Neizvestny, I G ^a   Suprun, S P ^a   Shumsky, V N ^a   Talochkin, A B ^a   Fedosenko, E V ^a   Burbaev, T M ^b   Kurbatov, V A ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLIZATION; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SUBSTRATES;

UNSTRAINED HETEROSYSTEMS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035677489     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/12/4/310     Document Type: Conference Paper

References (7)