Determining band offsets of InAs/GaAs with formation of self-assembled InAs quantum dots

Guangdianzi Jiguang/Journal of Optoelectronics Laser

Volumn 18, Issue 1, 2007, Pages 74-77

  Wang, Hai Long ^a   Qin, Wen Hua ^a   Zhao, Chuan Hua ^b  

^a QUFU NORMAL UNIVERSITY   (China)

^b TAISHAN MEDICAL UNIVERSITY   (China)

Author keywords

Band offset; InAs GaAs; Self assembled quantum dots

Indexed keywords

BAND STRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; HETEROJUNCTIONS; INDIUM ARSENIDE; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE;

BAND OFFSET; ENERGY BAND; SELF ASSEMBLED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34248338326     PISSN: 10050086     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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